Metal Organic Chemical Vapor Deposition Characteristics of Germanium Precursors

被引：0
|
作者：
Kim, Sun-Hee [1 ]
Kim, Bong-June [1 ]
Kim, Do-Heyoung [2 ]
Lee, June-Key [1 ]
机构：
[1] Chonnam Natl Univ, Sch Mat Sci & Engn, Gwangju, South Korea
[2] Chonnam Natl Univ, Sch Appl Chem Engn, Gwangju, South Korea
来源：
KOREAN JOURNAL OF MATERIALS RESEARCH | 2008年 / 18卷 / 06期
关键词：
Tetra-allyl Germanium; germane; metal organic chemical vapor deposition; TiN;
D O I：
10.3740/MRSK.2008.18.6.302
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [Ge(allyl)(4)], and germane (GeH4) as precursors. Ge thin films were grown on a TiN(50 nm)/SiO2/Si substrate by varying the growth conditions of the reactive gas (H-2), temperature (300-700 degrees C) and pressure (1-760Torr). H-2 gas helps to remove carbon from Ge film for a Ge(allyl)(4) precursor but not for a GeH4 precursor. Ge(allyl)(4) exhibits island growth (VW mode) characteristics under conditions of 760Torr at 400-700 degrees C, whereas GeH4 shows a layer growth pattern (FM mode) under conditions of 5Torr at 400-700 degrees C. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.
引用
收藏
页码：302 / 306
页数：5
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