HYDROGEN-FREE AMORPHOUS-CARBON PREPARATION AND PROPERTIES

被引：89

作者：

MCKENZIE, DR ^{[1
]}

YIN, Y ^{[1
]}

MARKS, NA ^{[1
]}

DAVIS, CA ^{[1
]}

PAILTHORPE, BA ^{[1
]}

AMARATUNGA, GAJ ^{[1
]}

VEERASAMY, VS ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE CB2 1PZ,ENGLAND

来源：

关键词：

D O I：

10.1016/0925-9635(94)90185-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous carbon containing very little hydrogen and having a highly tetrahedral character is deposited by filtered cathodic arc. This amorphous carbon shows photoconductivity under white light illumination. It is slightly p-type in pure form but becomes n-type when doped with nitrogen. Electron diffraction shows that nitrogen levels of less than 1% do not distort the tetrahedral network, but at higher concentrations nitrogen destabilises the tetrahedral structure. Plasmon spectroscopy shows the presence of a 1 nm ''defective'' surface layer even in the pure material which has implications for device applications. A junction field effect transistor structure is proposed as a possible device.

引用

页码：353 / 360

页数：8

共 18 条

[1]

Aksenov I. I., 1980, Soviet Physics - Technical Physics, V25, P1164

[2] AMORPHOUS DIAMOND-SI SEMICONDUCTOR HETEROJUNCTIONS [J].