DIRECT GROWTH OF ALGAAS/GAAS SINGLE QUANTUM-WELLS ON GAAS SUBSTRATES CLEANED BY ELECTRON-CYCLOTRON-RESONANCE (ECR) HYDROGEN PLASMA

被引:20
作者
KONDO, N
NANISHI, Y
FUJIMOTO, M
机构
[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa, 243-01
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 1B期
关键词
ECR HYDROGEN PLASMA; REGROWTH; SURFACE CLEANING; PHOTOLUMINESCENCE (PL); SINGLE QUANTUM WELL (SQW); ATOMIC FORCE MICROSCOPY (AFM); GAAS; ALGAAS; IN SITU VACUUM PROCESS;
D O I
10.1143/JJAP.33.L91
中图分类号
O59 [应用物理学];
学科分类号
摘要
Direct growth of AlGaAs/GaAs single quantum wells (SQWs) on GaAs substrates without growing buff er layers is carried out by using electron cyclotron resonance (ECR) hydrogen plasma cleaning. SQW structures are successively grown by molecular beam expitaxy (MBE) after the cleaning process without breaking the vacuum. Photoluminescence shows intense and narrow spectra, in clear contrast to that of conventional thermal cleaning. Atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) analyses show that surface roughness and interface impurity accumulations are significantly reduced as well. A flat and clean surface obtained by plasma cleaning improves the quality of grown layers.
引用
收藏
页码:L91 / L93
页数:3
相关论文
共 11 条
[1]   DAMAGE AND CONTAMINATION-FREE GAAS AND ALGAAS ETCHING USING A NOVEL ULTRAHIGH-VACUUM REACTIVE ION-BEAM ETCHING SYSTEM WITH ETCHED SURFACE MONITORING AND CLEANING METHOD [J].
ASAKAWA, K ;
SUGATA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :677-680
[2]   MOLECULAR-BEAM-EPITAXIAL GROWTH OF N-ALGAAS ON CLEAN CL-2-GAS ETCHED GAAS-SURFACES AND THE FORMATION OF HIGH MOBILITY 2-DIMENSIONAL ELECTRON-GAS AT THE ETCH-REGROWN INTERFACES [J].
KADOYA, Y ;
NOGE, H ;
KANO, H ;
SAKAKI, H ;
IKOMA, N ;
NISHIYAMA, N .
APPLIED PHYSICS LETTERS, 1992, 61 (14) :1658-1660
[3]  
KIZUKI H, 1993, GALLIUM ARSENIDE REL, V129, P603
[4]   LOW-TEMPERATURE SURFACE CLEANING OF GAAS BY ELECTRON-CYCLOTRON RESONANCE (ECR) PLASMA [J].
KONDO, N ;
NANISHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (01) :L7-L9
[5]  
KONDO N, 1993, GALLIUM ARSENIDE REL, V129, P585
[6]   GAAS SURFACE OXIDATION AND DEOXIDATION USING ELECTRON-CYCLOTRON RESONANCE OXYGEN AND HYDROGEN PLASMAS [J].
LU, Z ;
SCHMIDT, MT ;
OSGOOD, RM ;
HOLBER, WM ;
PODLESNIK, DV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :1040-1044
[7]   GAAS-OXIDE REMOVAL USING AN ELECTRON-CYCLOTRON RESONANCE HYDROGEN PLASMA [J].
LU, Z ;
SCHMIDT, MT ;
CHEN, D ;
OSGOOD, RM ;
HOLBER, WM ;
PODLESNIK, DV ;
FORSTER, J .
APPLIED PHYSICS LETTERS, 1991, 58 (11) :1143-1145
[8]   INSITU CLEANING OF GAAS SUBSTRATES WITH HCL-GAS AND HYDROGEN MIXTURE PRIOR TO MBE GROWTH [J].
SAITO, J ;
NANBU, K ;
ISHIKAWA, T ;
KONDO, K .
JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :322-327
[9]   A NEW SELECTIVE MOVPE REGROWTH PROCESS UTILIZING INSITU VAPOR-PHASE ETCHING FOR OPTOELECTRONIC INTEGRATED-CIRCUITS [J].
SHIMOYAMA, K ;
INOUE, Y ;
KATOH, M ;
GOTOH, H ;
SUZUKI, Y ;
YAJIMA, H .
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :767-771
[10]   LOW-TEMPERATURE CLEANING OF GAAS SUBSTRATE BY ATOMIC-HYDROGEN IRRADIATION [J].
SUGAYA, T ;
KAWABE, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (3A) :L402-L404