INFLUENCE OF AN UNDOPED (ALGA)AS SPACER ON MOBILITY ENHANCEMENT IN GAAS-(ALGA)AS SUPER-LATTICES

被引：149

作者：

STORMER, HL ^{[1
]}

PINCZUK, A ^{[1
]}

GOSSARD, AC ^{[1
]}

WIEGMANN, W ^{[1
]}

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 09期

关键词：

D O I：

10.1063/1.92481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：691 / 693

页数：3

共 15 条

[1] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J].

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

ETIENNE, P ;

LAVIRON, M ;

CHAPLART, J ;

LINH, NT .

ELECTRONICS LETTERS, 1980, 16 (17) :667-668

[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[3]

DRUMMOND TJ, UNPUBLISHED

[4] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J].

HESS, K .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :484-486

[5] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[6] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE [J].

MORI, S ;

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (03) :865-873

[7] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J].

MORKOC, H ;

WITKOWSKI, LC ;

DRUMMOND, TJ ;

STANCHAK, CM ;

CHO, AY ;

STREETMAN, BG .

ELECTRONICS LETTERS, 1980, 16 (19) :753-754

[8]

Stormer H. L., 1980, Journal of the Physical Society of Japan, V49, P1013

[9] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J].

STORMER, HL ;

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W ;

STURGE, MD .

SOLID STATE COMMUNICATIONS, 1979, 29 (10) :705-709

[10]

STORMER HL, 1978, 14TH P INT C PHYS SE, P557

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