ELECTRONIC-STRUCTURE OF HIGHLY FLUORINATED C-60

被引:35
作者
BENNING, PJ
OHNO, TR
WEAVER, JH
MUKHERJEE, P
ADCOCK, JL
COMPTON, RN
DUNLAP, BI
机构
[1] UNIV TENNESSEE,DEPT CHEM,KNOXVILLE,TN 37996
[2] USN,RES LAB,DIV CHEM,THEORET CHEM SECT,WASHINGTON,DC 20375
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 03期
关键词
D O I
10.1103/PhysRevB.47.1589
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Synchrotron-radiation photoemission was used to investigate the valence bands and C Is core-level features of thin films of C60Fx, x=46+/-2. The valence-band spectra show seven distinct features and a bandwidth of approximately 12 eV. Comparison of the calculated and experimental 40-eV photoemission spectra and the C Is core-level shifts suggests that the CF bond distances are closer to those of fluoromethane than to those of icosahedral C60F60 optimized within the local-density approximation. The valence-band maximum is approximately 5 eV below the Fermi level E(F), indicating that C60F46+/-2 is a wide-band-gap insulator. The deposition of potassium atoms on these fluorinated C60 films results in the partial removal of fluorine to form KF.
引用
收藏
页码:1589 / 1592
页数:4
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