SHORT-CHANNEL MOS FETS FABRICATED BY SELF-ALIGNED ION-IMPLANTATION AND LASER ANNEALING

被引：11

作者：

KOYANAGI, M

TAMURA, H

MIYAO, M

HASHIMOTO, N

TOKUYAMA, T

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 08期

关键词：

D O I：

10.1063/1.91229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Short-channel MOS FET's are successfully fabricated using Q-switched ruby laser irradiation on As-implanted sources and drains. Implantation and laser irradiation are both self-aligned by the polysilicon gate electrodes. The threshold-voltage-vs-channel-length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.

引用

页码：621 / 623

页数：3

共 8 条

[1]

EVANS CA, 1978, APPL PHYS LETT, V32, P276

[2] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

DELINE, VR ;

WILLIAMS, P ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278

[3]

KOYANAGI M, UNPUBLISHED

[4] P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER-INDUCED DIFFUSION [J].

NARAYAN, J ;

YOUNG, RT ;

WOOD, RF ;

CHRISTIE, WH .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :338-340

[5]

SEIDEL TE, 1978, P ELECTROCHEMICAL SO, V78, P517

[6]

VENKATESAN TNC, 1978, APPL PHYS LETT, V33, P662

[7]

WHITE CW, 1978, APPL PHYS LETT, V32, P276

[8] LASER ANNEALING OF BORON-IMPLANTED SILICON [J].

YOUNG, RT ;

WHITE, CW ;

CLARK, GJ ;

NARAYAN, J ;

CHRISTIE, WH ;

MURAKAMI, M ;

KING, PW ;

KRAMER, SD .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :139-141

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