EFFECT OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF SHALLOW SILICIDE CONTACTS ON SI USING PD-W AND PT-W ALLOYS

被引:24
作者
EIZENBERG, M
OTTAVIANI, G
TU, KN
机构
关键词
D O I
10.1063/1.91713
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:87 / 89
页数:3
相关论文
共 7 条
[1]   REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].
ANDREWS, JM ;
LEPSELTER, MP .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+
[2]   FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE [J].
ANDREWS, JM ;
KOCH, FB .
SOLID-STATE ELECTRONICS, 1971, 14 (10) :901-&
[4]   MICROSTRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDES FORMED ON SILICON [J].
OHDOMARI, I ;
KUAN, TS ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7020-7029
[5]   CONTACT REACTION BETWEEN SI AND PD-W ALLOY-FILMS [J].
OLOWOLAFE, JO ;
TU, KN ;
ANGILELLO, J .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6316-6320
[6]  
Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[7]  
Tu K.N., J APPL PHYS