SUPERLATTICES AND MULTILAYERS IN HYDROGENATED AMORPHOUS-SILICON DEVICES

被引：8
|
作者：
HIROSE, M [1 ]
MIYAZAKI, S [1 ]
机构：
[1] HIROSHIMA UNIV,INTEGRATED SYST RES CTR,HIROSHIMA 730,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期
关键词：
D O I：
10.1109/16.40948
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2873 / 2876
页数：4
相关论文
共 50 条
  • [41] OPTICAL BISTABILITY IN HYDROGENATED AMORPHOUS-SILICON
    TANN, J
    GAL, M
    MEANEY, K
    TAYLOR, PC
    APPLIED PHYSICS LETTERS, 1990, 56 (11) : 1017 - 1018
  • [42] HYDROGENATED AMORPHOUS-SILICON DOPED WITH DYSPROSIUM
    KULIKOV, GS
    MEZDROGINA, MM
    PERSHEEV, SK
    ABDURAKHMANOV, KP
    SEMICONDUCTORS, 1993, 27 (06) : 583 - 584
  • [43] DOPING AND PSEUDODOPING OF HYDROGENATED AMORPHOUS-SILICON
    GOLIKOVA, OA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (09): : 915 - 926
  • [44] STRUCTURAL MODEL FOR HYDROGENATED AMORPHOUS-SILICON
    WEAIRE, D
    WOOTEN, F
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 495 - 500
  • [45] LITHIUM STABILITY IN HYDROGENATED AMORPHOUS-SILICON
    BEYER, W
    HERION, J
    ZASTROW, U
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 111 - 114
  • [46] A STRUCTURAL MODEL OF HYDROGENATED AMORPHOUS-SILICON
    DRCHAL, V
    MALEK, J
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1990, 62 (03): : 271 - 287
  • [47] DEFECT RELAXATION IN HYDROGENATED AMORPHOUS-SILICON
    CRANDALL, RS
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 597 - 599
  • [48] RELAXATION KINETICS IN HYDROGENATED AMORPHOUS-SILICON
    KONENKAMP, R
    WILD, E
    PHYSICAL REVIEW B, 1990, 42 (09): : 5887 - 5890
  • [49] LASER ANNEALING OF HYDROGENATED AMORPHOUS-SILICON
    PANKOVE, JI
    WU, CP
    MAGEE, CW
    MCGINN, JT
    JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (05) : 905 - 912
  • [50] PHOTOCONDUCTIVITY AND TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON
    CRANDALL, RS
    SOLAR CELLS, 1980, 2 (03): : 319 - 330
12345