SUPERLATTICES AND MULTILAYERS IN HYDROGENATED AMORPHOUS-SILICON DEVICES

被引：8

作者：

HIROSE, M ^{[1
]}

MIYAZAKI, S ^{[1
]}

机构：

[1] HIROSHIMA UNIV,INTEGRATED SYST RES CTR,HIROSHIMA 730,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期

关键词：

D O I：

10.1109/16.40948

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2873 / 2876

页数：4

共 20 条

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[9] RESONANT TUNNELING THROUGH AMORPHOUS-SILICON SILICON-NITRIDE DOUBLE-BARRIER STRUCTURES [J].

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[10]

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