STRUCTURE AND CONDUCTIVITY MECHANISMS IN SOME LIQUID SEMICONDUCTORS

被引:35
作者
HODGKINSON, RJ
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D O I
10.1080/14786437108216413
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T [工业技术];
学科分类号
08 ;
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页码:673 / +
页数:1
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共 21 条
[1]   CONDUCTION MECHANISM OF SELF-COMPENSATED-HIGHLY DISORDERED SEMICONDUCTORS (A POSSIBLE MODEL FOR SEMICONDUCTING GLASSES) .I. AMBIPOLAR CONDUCTIVITY [J].
BOER, KW .
PHYSICA STATUS SOLIDI, 1969, 34 (02) :721-&
[2]   SOME ELECTRICAL TRANSPORT STUDIES ON COMPOUNDS OF TI-TE SYSTEM [J].
CRUCEANU, E ;
SLADARU, S .
JOURNAL OF MATERIALS SCIENCE, 1969, 4 (05) :410-&
[3]   ELECTRONIC PROPERTIES OF LIQUID SEMICONDUCTOR SOLUTIONS OF THALLIUM AND TELLURIUM [J].
CUTLER, M ;
MALLON, CE .
PHYSICAL REVIEW, 1966, 144 (02) :642-&
[4]   ELECTRIC PROPERTIES OF N-TYPE LIQUID ALLOYS OF THALLIUM AND TELLURIUM [J].
CUTLER, M ;
FIELD, MB .
PHYSICAL REVIEW, 1968, 169 (03) :632-&
[5]  
DANCY EA, 1965, T METALL SOC AIME, V233, P270
[6]  
DANCY EA, 1963, T METALL SOC AIME, V227, P1034
[7]   ELECTRICAL PROPERTIES OF LIQUID SEMICONDUCTORS [J].
ENDERBY, JE ;
SIMMONS, CJ .
PHILOSOPHICAL MAGAZINE, 1969, 20 (163) :125-+
[8]  
Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700
[9]  
Hodgkinson R.J., 1956, J ELECTRONICS, V1, P612
[10]   MISCIBILITY GAPS, ORDERED LIQUIDS AND LIQUID SEMICONDUCTORS [J].
HODGKINSON, RJ .
PHILOSOPHICAL MAGAZINE, 1970, 22 (180) :1187-+