LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON

被引：67

作者：

FLADDA, G

BJORKQVIST, K

ERIKSSON, L

SIGURD, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 16卷 / 08期

关键词：

D O I：

10.1063/1.1653208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：313 / +

页数：1

共 13 条

[1] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J].

BARON, R ;

SHIFRIN, GA ;

MARSH, OJ ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3702-&

[2]

BJORKQVIST K, 1968, APPL PHYS LETT, V13, P379, DOI 10.1063/1.1652479

[3] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

DAVIES, JA ;

DENHARTO.J ;

ERIKSSON, L ;

MAYER, JW .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&

[4] INFLUENCE OF N-TYPE DOPANTS ON LATTICE LOCATION OF IMPLANTED P-TYPE DOPANTS IN SI AND GE [J].

ERIKSSON, L ;

FLADDA, G ;

BJORKQVIST, K .

APPLIED PHYSICS LETTERS, 1969, 14 (06) :195-+

[5] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J].

ERIKSSON, L ;

DAVIES, JA ;

JOHANSSON, NG ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :842-+

[6]

ERIKSSON L, 1966, CAN NUCL TECHNOL, V5, P40

[7]

Fladda G., 1969, Radiation Effects, V1, P249, DOI 10.1080/00337576908235567

[8]

MAYER JW, ION IMPLANTATION SEM

[9]

MITCHELL IV, 1969, PRIVATE COMMUNICATIO

[10]

NORTH JP, UNPUBLISHED

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