DUAL-TRANSISTOR METHOD TO DETERMINE THRESHOLD-VOLTAGE SHIFTS DUE TO OXIDE-TRAPPED CHARGE AND INTERFACE TRAPS IN METAL-OXIDE-SEMICONDUCTOR DEVICES

被引：25
作者：
FLEETWOOD, DM
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 05期
关键词：
D O I：
10.1063/1.101854
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：466 / 468
页数：3
相关论文
共 12 条
[1]   MOSFET AND MOS CAPACITOR RESPONSES TO IONIZING-RADIATION [J].
BENEDETTO, JM ;
BOESCH, HE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1461-1466
[2]   USING LABORATORY X-RAY AND CO-60 IRRADIATIONS TO PREDICT CMOS DEVICE RESPONSE IN STRATEGIC AND SPACE ENVIRONMENTS [J].
FLEETWOOD, DM ;
WINOKUR, PS ;
SCHWANK, JR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1497-1505
[3]   A REEVALUATION OF WORST-CASE POSTIRRADIATION RESPONSE FOR HARDENED MOS-TRANSISTORS [J].
FLEETWOOD, DM ;
DRESSENDORFER, PV ;
TURPIN, DC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1178-1183
[4]  
FLEETWOOD DM, UNPUB
[5]   A SIMPLE-MODEL FOR SEPARATING INTERFACE AND OXIDE CHARGE EFFECTS IN MOS DEVICE CHARACTERISTICS [J].
GALLOWAY, KF ;
GAITAN, M ;
RUSSELL, TJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1497-1501
[6]   SIMPLE TECHNIQUE FOR SEPARATING THE EFFECTS OF INTERFACE TRAPS AND TRAPPED-OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].
MCWHORTER, PJ ;
WINOKUR, PS .
APPLIED PHYSICS LETTERS, 1986, 48 (02) :133-135
[7]  
SAKS NS, 1987, IEEE T NUCL SCI, V34, P1348
[8]   PHYSICAL-MECHANISMS CONTRIBUTING TO DEVICE REBOUND [J].
SCHWANK, JR ;
WINOKUR, PS ;
MCWHORTER, PJ ;
SEXTON, FW ;
DRESSENDORFER, PV ;
TURPIN, DC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1434-1438
[9]   CORRELATION OF RADIATION EFFECTS IN TRANSISTORS AND INTEGRATED-CIRCUITS [J].
SEXTON, FW ;
SCHWANK, JR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :3975-3981
[10]   ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].
SUN, SC ;
PLUMMER, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1497-1508
12