FAST ANISOTROPIC ETCHING OF SILICON IN AN INDUCTIVELY COUPLED PLASMA REACTOR

被引：111
作者：
PERRY, AJ
BOSWELL, RW
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期
关键词：
D O I：
10.1063/1.102127
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：148 / 150
页数：3
相关论文
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[4]   A PARAMETRIC STUDY OF THE ETCHING OF SILICON IN SF6 MICROWAVE MULTIPOLAR PLASMAS - INTERPRETATION OF ETCHING MECHANISMS [J].
PETIT, B ;
PELLETIER, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (06) :825-834
[5]   PLASMA-ASSISTED ETCHING MECHANISMS - THE IMPLICATIONS OF REACTION PROBABILITY AND HALOGEN COVERAGE [J].
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1376-1383
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