CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON FROM SILANE AT LOW-TEMPERATURES .1. VERY LOW-PRESSURE DEPOSITION

被引：85

作者：

COMFORT, JH ^{[1
]}

REIF, R ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 08期

关键词：

D O I：

10.1149/1.2097378

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2386 / 2398

页数：13

共 57 条

[1] TEMPERATURE-DEPENDENCE OF THE GROWTH-RATE OF SILICON PREPARED THROUGH CHEMICAL VAPOR-DEPOSITION FROM SILANE [J].

BEERS, AM ;

BLOEM, J .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :153-155

[2] KINETICS OF INDUCTION PERIOD FOR NUCLEATION OF SILICON ON SI(111) SUBSTRATES AT U-H-V [J].

BENNETT, RJ ;

GALE, RW .

PHILOSOPHICAL MAGAZINE, 1970, 22 (175) :135-&

[3]

BLOEM J, 1978, CURRENT TOPICS MATER, V1

[4] KINETICS OF THE DEPOSITION OF SILICON BY SILANE PYROLYSIS AT LOW-TEMPERATURES AND ATMOSPHERIC-PRESSURE [J].

BRYANT, WA .

THIN SOLID FILMS, 1979, 60 (01) :19-25

[5] BULK-QUALITY BIPOLAR-TRANSISTORS FABRICATED IN LOW-TEMPERATURE (TDEP=800-DEGREES-C) EPITAXIAL SILICON [J].

BURGER, WR ;

REIF, R .

APPLIED PHYSICS LETTERS, 1987, 50 (20) :1447-1449

[6] ELECTRICAL QUALITY OF LOW-TEMPERATURE (TDEP=775-DEGREES-C) EPITAXIAL SILICON - THE EFFECT OF DEPOSITION RATE [J].

BURGER, WR ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) :383-389

[7] AN OPTIMIZED INSITU ARGON SPUTTER CLEANING PROCESS FOR DEVICE QUALITY LOW-TEMPERATURE (T LESS-THAN-OR-EQUAL-TO 800-DEGREES-C) EPITAXIAL SILICON - BIPOLAR-TRANSISTOR AND PN JUNCTION CHARACTERIZATION [J].

BURGER, WR ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) :4255-4268

[8] MECHANISM OF SI POLYCRYSTALLINE GROWTH ON A SI3N4 SUBSTRATE FROM SIH4/H2 AT REDUCED PRESSURES [J].

CADORET, R ;

HOTTIER, F .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (03) :583-592

[9] MECHANISMS OF SILICON MONOCRYSTALLINE GROWTH FROM SIH4/H-2 AT REDUCED PRESSURES [J].

CADORET, R ;

HOTTIER, F .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :259-274

[10] GROWTH OF HOMOEPITAXIAL SILICON AT LOW TEMPERATURES USING SILANE-HELIUM MIXTURES [J].

CHIANG, YS ;

RICHMAN, D .

METALLURGICAL TRANSACTIONS, 1971, 2 (03) :743-&

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