ORIENTATION DEPENDENCE OF LASER AMORPHIZATION OF CRYSTAL SI

被引：31

作者：

YATER, JA

THOMPSON, MO

机构：

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 63卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.63.2088

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2088 / 2091

页数：4

共 20 条

[1] SOLUTE TRAPPING IN SILICON BY LATERAL MOTION OF (111) LEDGES [J].

AZIZ, MJ ;

WHITE, CW .

PHYSICAL REVIEW LETTERS, 1986, 57 (21) :2675-2678

[2]

AZIZ MJ, COMMUNICATION

[3] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[4] ORIENTATION DEPENDENCE OF HIGH-SPEED SILICON CRYSTAL-GROWTH FROM THE MELT [J].

CULLIS, AG ;

CHEW, NG ;

WEBBER, HC ;

SMITH, DJ .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) :624-638

[5] SOLID-PHASE EPITAXY OF LASER AMORPHIZED SILICON [J].

CUSTER, JS ;

THOMPSON, MO ;

BUCKSBAUM, PH .

APPLIED PHYSICS LETTERS, 1988, 53 (15) :1402-1404

[6] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J].

DONOVAN, EP ;

SPAEPEN, F ;

TURNBULL, D ;

POATE, JM ;

JACOBSON, DC .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :698-700

[7] SOLIDIFICATION KINETICS OF PULSED LASER MELTED SILICON BASED ON THERMODYNAMIC CONSIDERATIONS [J].

GALVIN, GJ ;

MAYER, JW ;

PEERCY, PS .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :644-646

[8]

GOLDMAN LM, 1987, J MATER RES, V2, P526

[9]

GRABOV MH, 1989, ATOMIC SCALE CALCULA, P359

[10]

Larson B. C., 1988, Fundamentals of Beam-Solid Interactions and Transient Thermal Processing. Symposium, P513

← 1 2 →