GAAS-GAP HETEROJUNCTIONS

被引：24

作者：

DAVIS, ME

ZEIDENBERGS, G

ANDERSON, RL

机构：

[1] Wright-Patterson AFB, Avionics Lab, Ohio

[2] IBM Corp, New York, Hopewell Junction

[3] Escola Politecnica, Univ. de Sao Paulo, Sao Paulo

来源：

PHYSICA STATUS SOLIDI | 1969年 / 34卷 / 01期

关键词：

D O I：

10.1002/pssb.19690340139

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

GaAsGaP n–n, n–p, and p–n heterojunctions were fabricated by growing GaAs onto GaP substrates using HCl as the transport agent in an open‐tube system. It is found that the conduction band is continuous at the interface. This is in contrast to reported discontinuities of 0.65 and 0.22 eV. A high concentration of interface states is present in such junctions as evidenced by the frequency dependence of capacitance, and the I–U characteristics. Photocurrent response is as expected in n(GaAs)–p(GaP) heterojunctions, but a modulation effect was observed in p(GaAs)–n(GaP) junctions. This effect is not well understood. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：385 / +

页数：1

共 16 条

[1]

ALFEROV ZI, 1967, FIZ TVERD TELA+, V8, P2813

[2]

ALFEROV ZI, 1965, SOV PHYS-SOLID STATE, V7, P990

[3] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].