TIGHT-BINDING MODEL AND INTERACTIONS SCALING LAWS FOR SILICON AND GERMANIUM

被引:55
作者
GROSSO, G
PIERMAROCCHI, C
机构
[1] INFM,I-56126 PISA,ITALY
[2] ECOLE POLYTECH FED LAUSANNE,CH-1015 LAUSANNE,SWITZERLAND
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 23期
关键词
D O I
10.1103/PhysRevB.51.16772
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We provide a set of parameters for second-neighbor tight-binding model Hamiltonians, including spin-orbit interaction, in silicon and germanium. Our attempt is the construction of a simple Hamiltonian, useful as a stepping stone for the description of more complex systems. We introduce a criterion for establishing transferable scaling laws of the parameters. The results obtained, checked versus determination of deformation potentials under hydrostatic and uniaxial [001] stress, indicate a clear deviation from the d-2 Harrison scaling law. © 1995 The American Physical Society.
引用
收藏
页码:16772 / 16777
页数:6
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