Carbon-Stimulated Self-Organization of Ge Nanoislands during Molecular Beam Epitaxy of Ge/CaF2/Si(111) Heterostructures

被引：0

作者：

Sokolov, L. V. ^{[1
]}

Deryabin, A. S. ^{[1
]}

Rodyakina, E. E. ^{[1
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Pr. Akad Lavrenteva 13, Novosibirsk 630090, Russia

来源：

OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2009年 / 45卷 / 04期

关键词：

nanoislands; heterostructures; molecular beam epitaxy;

D O I：

10.3103/S8756699009040074

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The self-organization of germanium nanoislands on the surface of calcium fluoride was studied using atomic-force microscopy and reflection electron diffraction. A Ge/CaF2/Si(111) structure was grown by molecular beam epitaxy. The surface of the calcium fluoride film was modified by submonolayer carbon coverage to stimulate the formation of germanium nanoislands. The parameters of an array of nanoislands were found to depend on the coverage.

引用

页码：328 / 331

页数：4