VALENCE BAND STRUCTURE OF SILICON

被引：17
作者：
HULDT, L
STAFLIN, T
机构：
来源：
PHYSICAL REVIEW LETTERS | 1958年 / 1卷 / 09期
关键词：
D O I：
10.1103/PhysRevLett.1.313
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：313 / 315
页数：3
相关论文
共 17 条
[1]   NEW INFRARED ABSORPTION BANDS IN P-TYPE GERMANIUM [J].
BRIGGS, HB ;
FLETCHER, RC .
PHYSICAL REVIEW, 1952, 87 (06) :1130-1131
[2]   ABSORPTION OF INFRARED LIGHT BY FREE CARRIERS IN GERMANIUM [J].
BRIGGS, HB ;
FLETCHER, RC .
PHYSICAL REVIEW, 1953, 91 (06) :1342-1346
[3]  
BURSTEIN, 1956, 1954 P C PHOT ATL CI, P353
[4]  
DEXTER, 1956, PHYS REV, V104, P637
[5]  
DRESSELHAUS, 1955, PHYS REV, V98, P368
[6]  
FAN, 1956, 1954 P C PHOT ATL CI, P184
[7]   INFRA-RED ABSORPTION IN SEMICONDUCTORS [J].
FAN, HY .
REPORTS ON PROGRESS IN PHYSICS, 1956, 19 :107-155
[8]   THE ELECTRONIC ENERGY BAND STRUCTURE OF SILICON AND GERMANIUM [J].
HERMAN, F .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (12) :1703-1732
[9]   SOME RECENT DEVELOPMENTS IN THE CALCULATION OF CRYSTAL ENERGY BANDS - NEW RESULTS FOR THE GERMANIUM CRYSTAL [J].
HERMAN, F .
PHYSICA, 1954, 20 (10) :801-812
[10]   INFRARED ABSORPTION OF PHOTO GENERATED FREE CARRIERS IN GERMANIUM [J].
HULDT, L ;
STAFLIN, T .
PHYSICAL REVIEW LETTERS, 1958, 1 (07) :236-237
12