SPATIALLY DIRECT AND INDIRECT OPTICAL-TRANSITIONS IN SHALLOW ETCHED GAAS/ALGAAS WIRES, DOTS AND ANTIDOTS

被引：11
作者：
HIRLER, F
STRENZ, R
KUCHLER, R
ABSTREITER, G
BOHM, G
SMOLINER, J
TRANKLE, G
WEIMANN, G
机构：
[1] Walter Schottky Inst., Tech. Univ., Munchen, Garching
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 04期
关键词：
D O I：
10.1088/0268-1242/8/4/024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By applying a shallow etching technique, the electrons in a remote doped GaAs/AlGaAs quantum well and the photogenerated holes are separated into adjacent lateral regions. The dominant photoluminescence of these carriers is shown to be indirect in real space. In addition, a spatially direct luminescence is observed. Its origin depends on the type of structuring and is discussed for wires, dots and antidots in comparison with unstructured samples.
引用
收藏
页码：617 / 621
页数：5
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