NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS

被引：112
作者：
THOMPSON, GHB
HENSHALL, GD
机构：
来源：
ELECTRONICS LETTERS | 1980年 / 16卷 / 01期
关键词：
D O I：
10.1049/el:19800033
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：42 / 44
页数：3
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[1]   TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERS [J].
ETTENBERG, M ;
NUESE, CJ ;
KRESSEL, H .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2949-2950
[2]   THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS [J].
GOODWIN, AR ;
PETERS, JR ;
PION, M ;
THOMPSON, GHB ;
WHITEAWAY, JEA .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :3126-3131
[3]   TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].
HORIKOSHI, Y ;
FURUKAWA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) :809-815
[4]   ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].
HSIEH, JJ .
APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285
[5]   IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES [J].
YAMAMOTO, T ;
SAKAI, K ;
AKIBA, S ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :95-98
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