Effect of Constriction on Phonon Transport in Silicon Thin Films and Nanowires

被引：2

作者：

Dulhani, Jay ^{[1
]}

Lee, Bong Jae ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mech Engn, Daejeon, South Korea

来源：

SMART SCIENCE | 2016年 / 4卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

Nanoscale constriction; heat conduction; Boltzman transport equation;

D O I：

10.1080/23080477.2016.1229101

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Technological advancement has made manufacturing of various nanostructures possible. Thermal transport in such nanostructures is fundamentally different from macroscale. Initial studies have indicated that thermal properties of these nanostructures also depend on its geometry. Hence, it is possible to tailor nanostructure geometry to achieve targeted thermal properties. In the present work, thermal transport in (a) constricted thin films and (b) constricted nanowires is studied using gray phonon Boltzmann transport equation (BTE) for a wide range of constriction ratio. Finite volume method is used to numerically solve the BTE with the relaxation time approximation. We show in this paper that by varying the degree of constriction, thermal conductivity of thin films and nanowires can be altered significantly. Thin films and nanowires are found to respond differently to constriction. [GRAPHICS] .

引用

页码：173 / 179

页数：7

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