VAPOR-PHASE EPITAXIAL INXGA1-XAS ON (100), (111)A, AND (111)B INP SUBSTRATES

被引：18
作者：
KANBE, H
YAMAUCHI, Y
SUSA, N
机构：
[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi
来源：
APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 08期
关键词：
D O I：
10.1063/1.91223
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Effects of InP substrate orientation on InxGa1-xAs vapor-phase epitaxial growth are studied. The fractional composition x of the grown layer on (100) substrate is smaller than for (111) B at identical growth temperatures and gas flow rates. The In content x decreases with increasing temperature. Growth rate, carrier concentration, and carrier mobility depend on substrate orientation. Growth on (100) substrates at temperatures above 710°C is suitable for obtaining smooth surface layers with low carrier concentration and high mobility.
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页码：603 / 605
页数：3
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