TRANSVERSE-MODE STABILIZED GA1-XALXAS VISIBLE DIODE-LASERS

被引：36
作者：
KAJIMURA, T
KURODA, T
YAMASHITA, S
NAKAMURA, M
UMEDA, J
机构：
[1] Hitachi, Ltd., Central Research Laboratory, Kokubinji, Tokyo
来源：
APPLIED OPTICS | 1979年 / 18卷 / 11期
关键词：
D O I：
10.1364/AO.18.001812
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Transverse-mode stabilized visible diode lasers in the 0.7-μm wavelength region are fabricated by growing a Ga1−xAlxAs double heterostructure on a grooved GaAs substrate (channeled-substrate-planar structure). The diodes operate stably in the fundamental transverse mode and provide nonstigmatic laser beams. They can be collimated with a 0.5–1-mrad beam divergence using a simple graded-index fiber lens. Corresponding to single-longitudinal-mode operation at current levels above 1.1 times the threshold, a coherence length as long as 14 m is obtained in Michelson interference experiments. © 1979 Optical Society of America.
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页码：1812 / 1815
页数：4
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