EFFECT OF BOND LENGTH AND IONICITY ON THERMAL-EXPANSION OF TETRAHEDRAL SEMICONDUCTORS

被引:19
作者
VANUITERT, LG [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1016/0025-5408(77)90045-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:315 / 320
页数:6
相关论文
共 11 条
[1]  
Goldsmith A., 1961, HDB THERMOPHYSICAL P
[2]   OSCILLATOR-STRENGTHS IN TETRAHEDRAL SEMICONDUCTORS [J].
HARRISON, WA ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1976, 14 (02) :691-696
[3]  
HORRIGAN FA, 1971, OCT HIGH POW INFR LA
[4]  
LINES ME, COMMUNICATION
[5]  
NOVIKOV SI, 1966, SEMICONDUCT SEMIMET, V2, pCH2
[6]  
SAHAGIAN CS, 1972, AFCRL720170 AIR FORC
[7]  
SIROTA NN, 1966, SEMICONDUCT SEMIMET, V4, pCH2
[8]  
VANUITERT LG, TO BE PUBLISHED
[9]  
WEAST RC, 1972, HDB CHEMISTRY PHYSIC
[10]  
Wyckoff R.W.G., 1963, CRYST STRUCT, VVolume 1