ENHANCEMENT OF ADHESION IN ION-BEAM-MIXED CU/SIO2 SYSTEMS

被引：0
|
作者：
CHAE, KH [1 ]
JOO, JH [1 ]
CHOI, IS [1 ]
KIM, KS [1 ]
KIM, SS [1 ]
WHANG, CN [1 ]
KIM, HK [1 ]
MOON, DW [1 ]
机构：
[1] KOREA RES INST STAND & SCI,TAEJON 305606,SOUTH KOREA
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1993年 / 26卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A thin Cu layer (35 nm) deposited on SiO2 has been mixed with 80-keV Ar+ at room temperature, 550 K, and 650 K. Interfacial properties of the irradiated samples were investigated with Rutherford backscattering spectroscopy (RBS), grazing angle X-ray diffraction (GXRD), and X-ray photo-electron spectroscopy (XPS), and by using a scratch tester. Adhesion of the Cu film was improved by a factor of 3 and at a dose of 1.5 X 10(16) Ar+/cm2 by ion-beam mixing at room temperature, while high-temperature ion-beam mixing enhanced the adhesion by a factor of 5. Ballistic mixing plays a role in improving the adhesion for room-temperature ion-mixing, and creation of the Cu2O phase induced by ion-beam mixing contributes to the enhancement of the adhesion at high temperature.
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页码：612 / 616
页数：5
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