EPITAXIAL-GROWTH OF FERRITE FILMS BY CVD USING C-12

被引：0
|
作者：
GIBART, P [1 ]
ROBBINS, M [1 ]
KANE, AB [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1973年
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：169 / &
相关论文
共 50 条
  • [31] SELECTIVE GERMANIUM EPITAXIAL-GROWTH ON SILICON USING CVD TECHNOLOGY WITH ULTRA-PURE GASES
    KOBAYASHI, S
    CHENG, ML
    KOHLHASE, A
    SATO, T
    MUROTA, J
    MIKOSHIBA, N
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 259 - 262
  • [32] EPITAXIAL-GROWTH OF MN-SB MULTILAYERED FILMS
    NAKAYAMA, N
    MORITANI, I
    SHINJO, T
    NIPPON KAGAKU KAISHI, 1987, (11) : 1880 - 1885
  • [33] EPITAXIAL-GROWTH OF METAL SINGLE-CRYSTAL FILMS
    GRUNBAUM, E
    VACUUM, 1974, 24 (04) : 153 - 164
  • [34] ON EPITAXIAL-GROWTH OF DIAMOND FILMS ON (100) SILICON SUBSTRATES
    NARAYAN, J
    SRIVATSA, AR
    PETERS, M
    YOKOTA, S
    RAVI, KV
    APPLIED PHYSICS LETTERS, 1988, 53 (19) : 1823 - 1825
  • [35] EPITAXIAL-GROWTH OF COSI2 FILMS ON SI
    SAITOH, S
    ISHIWARA, H
    FURUKAWA, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C95 - C95
  • [36] EPITAXIAL-GROWTH OF SOLUTION GROWN POLYVINYLCHLORIDE (PVC) FILMS
    CHOPRA, KL
    RASTOGI, AC
    MALHOTRA, GL
    THIN SOLID FILMS, 1974, 24 (01) : 125 - 136
  • [37] EPITAXIAL-GROWTH OF GAAS FILMS FROM ELEMENTAL ARSENIC
    CHU, SS
    CHU, TL
    GREEN, RF
    CERNY, C
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (12) : 8316 - 8319
  • [38] EPITAXIAL-GROWTH OF VANADIUM FILMS EVAPORATED ON NACL SUBSTRATES
    YAMADA, Y
    KASUKABE, Y
    NAGATA, S
    YAMAGUCHI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12A): : 4010 - 4015
  • [39] EPITAXIAL-GROWTH OF THICK SMOOTH FILMS OF ZNS ON GAAS
    KAY, PMR
    LILLEY, P
    JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 339 - 344
  • [40] EPITAXIAL-GROWTH OF HIGH-TC SUPERCONDUCTING FILMS
    GAVALER, JR
    BRAGINSKI, AI
    JANOCKO, MA
    TALVACCHIO, J
    PHYSICA B & C, 1985, 135 (1-3): : 148 - 153
12345