MULTILAYER VAPOR-PHASE EPITAXIAL SILICON MILLIMETER-WAVE IMPATT DIODES

被引:2
作者
WEN, CP
WELLER, KP
YOUNG, AF
机构
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D O I
10.1109/T-ED.1972.17514
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:891 / &
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共 10 条
[1]  
BHOLA SR, 1963, RCA REV, V24, P511
[2]   MEASUREMENT OF FILM THICKNESS USING INFRARED INTERFERENCE [J].
DUMIN, DJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (08) :1107-&
[3]  
EDWARDS R, 1969, OCT INT EL DEV M WAS
[4]   HIGH-POWER AND HIGH-EFFICIENCY GAAS AVALANCHE DIODES [J].
KIM, C ;
ARMSTRON.LD .
APPLIED PHYSICS LETTERS, 1969, 14 (09) :270-&
[5]   ELECTROLYTIC REMOVAL OF P-TYPE GAAS SUBSTRATES FROM THIN, N-TYPE SEMICONDUCTOR LAYERS [J].
NUESE, CJ ;
GANNON, JJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (08) :1094-&
[6]  
SWAN CB, 1967, IEEE T, VED14, P584
[7]   ELECTROPOLISHING SILICON IN HYDROFLUORIC ACID SOLUTIONS [J].
TURNER, DR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (07) :402-408
[8]   ELECTROLYTIC SHAPING OF GERMANIUM AND SILICON [J].
UHLIR, A .
BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (02) :333-347
[9]  
WEN CY, TO BE PUBLISHED
[10]   BATCH FABRICATION OF INTEGRAL-HEAT-SINK IMPATT DIODES [J].
ZETTLER, RA ;
COWLEY, AM .
ELECTRONICS LETTERS, 1969, 5 (26) :693-&