HOT-ELECTRON DYNAMICS IN GAAS AVALANCHE DEVICES - COMPETITION BETWEEN BALLISTIC BEHAVIOR AND INTERVALLEY SCATTERING

被引：16

作者：

CAPASSO, F ^{[1
]}

NAHORY, RE ^{[1
]}

POLLACK, MA ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 11期

关键词：

D O I：

10.1016/0038-1101(79)90072-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Simple calculation in the high field regime show that ballistic motion is competitive with intervalley scattering processes in determining electron dynamics in GaAs along the 〈100〉 and 〈110〉 orientations. On the other hand, in the 〈111〉 orientation, the dynamics of electrons are controlled primarily by intervalley phonon scattering. These considerations, and the different threshold conditions for the three orientations are used to explain why significant orientational effects and related band structure dependent phenomena can be observed in GaAs avalanche diodes. © 1979.

引用

页码：977 / 979

页数：3

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