PULSED LASER-ANNEALING BEHAVIOR OF ION-IMPLANTED SEMICONDUCTORS

被引：0

|

作者：

RIMINI, E ^{[1
]}

FOTI, G ^{[1
]}

BAERI, P ^{[1
]}

CAMPISANO, SU ^{[1
]}

机构：

[1] UNIV CATANIA,IST STRUTTURA MAT,I-95125 CATANIA,ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期

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D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：C361 / C361

页数：1

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