ALL-ORGANIC THIN-FILM TRANSISTORS MADE OF ALPHA-SEXITHIENYL SEMICONDUCTING AND VARIOUS POLYMERIC INSULATING LAYERS

被引:164
作者
PENG, XZ [1 ]
HOROWITZ, G [1 ]
FICHOU, D [1 ]
GARNIER, F [1 ]
机构
[1] CNRS,MAT MOLEC LAB,F-94320 THIAIS,FRANCE
关键词
D O I
10.1063/1.103994
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin-film transistors (TFTs) were fabricated with a variety of organic polymer insulators topped with a vacuum evaporated organic semiconductor, α-sexithienyl (α6T). No field-enhanced source-drain current was obtained with polystyrene (PSt) and polymethylmethacrylate (PMMA). The field-enhanced current is weak with polyvinyl chloride (PVC), but much stronger with polyvinyl alcohol (PVA) and cyanoethylpullulan (CYEPL), a cyanoethylated polysaccharide which possesses a high dielectric constant (εr= 18.5 at 10 kHz). In these last two instances, the field-effect mobility surpasses the one measured on TFTs made on a SiO2 insulating layer. A strong correlation is found between the dielectric constant of the insulator and the field-effect mobility.
引用
收藏
页码:2013 / 2015
页数:3
相关论文
共 18 条
[1]   THEORY OF THIN-FILM TRANSISTOR [J].
ANDERSON, JC .
THIN SOLID FILMS, 1976, 38 (02) :151-161
[2]   FIELD-EFFECT MOBILITY OF POLY(3-HEXYLTHIOPHENE) [J].
ASSADI, A ;
SVENSSON, C ;
WILLANDER, M ;
INGANAS, O .
APPLIED PHYSICS LETTERS, 1988, 53 (03) :195-197
[3]   NEW SEMICONDUCTOR-DEVICE PHYSICS IN POLYMER DIODES AND TRANSISTORS [J].
BURROUGHES, JH ;
JONES, CA ;
FRIEND, RH .
NATURE, 1988, 335 (6186) :137-141
[4]   FIELD-EFFECT TRANSISTOR WITH DIPHTHALOCYANINE THIN-FILM [J].
CLARISSE, C ;
RIOU, MT ;
GAUNEAU, M ;
LECONTELLEC, M .
ELECTRONICS LETTERS, 1988, 24 (11) :674-675
[5]   ELECTRICAL-PROPERTIES OF POLYACETYLENE POLYSILOXANE INTERFACE [J].
EBISAWA, F ;
KUROKAWA, T ;
NARA, S .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3255-3259
[6]  
FICHOU D, 1989, Patent No. 7610
[7]  
FICHOU D, 1989, ELECTRONIC PROPERTIE, V3, P386
[8]   THIN-FILM TRANSISTORS BASED ON NICKEL PHTHALOCYANINE [J].
GUILLAUD, G ;
MADRU, R ;
ALSADOUN, M ;
MAITROT, M .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) :4554-4556
[9]   FIELD-EFFECT TRANSISTORS BASED ON INTRINSIC MOLECULAR SEMICONDUCTORS [J].
GUILLAUD, G ;
ALSADOUN, M ;
MAITROT, M ;
SIMON, J ;
BOUVET, M .
CHEMICAL PHYSICS LETTERS, 1990, 167 (06) :503-506
[10]   THE OLIGOTHIOPHENE-BASED FIELD-EFFECT TRANSISTOR - HOW IT WORKS AND HOW TO IMPROVE IT [J].
HOROWITZ, G ;
PENG, XZ ;
FICHOU, D ;
GARNIER, F .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :528-532