COLLECTIVE ELECTRON INTERACTION IN DOUBLE-BARRIER GAAS STRUCTURES

被引：8

作者：

GRUZINSKIS, V

MICKEVICIUS, R

POZELA, J

REKLAITIS, A

机构：

来源：

EUROPHYSICS LETTERS | 1988年 / 5卷 / 04期

关键词：

D O I：

10.1209/0295-5075/5/4/010

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：339 / 341

页数：3

共 11 条

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[7] ELECTRON-SCATTERING INTERACTION WITH COUPLED PLASMON-POLAR-PHONON MODES IN DEGENERATE SEMICONDUCTORS [J].

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[9] INJECTED-HOT-ELECTRON TRANSPORT IN GAAS [J].

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[10] ELECTRON ELECTRON INTERACTION IN DOPED SEMICONDUCTORS INCLUDING POLAR LO PHONON EFFECTS - APPLICATION TO HOT-ELECTRON SPECTROMETERS IN GAAS [J].

RORISON, JM ;

HERBERT, DC .

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