NOISE BEHAVIOR OF A STATIC INDUCTION TRANSISTOR BETWEEN 77-K AND 300-K

被引:1
作者
GUSTAFSSON, S
SUNDBLAD, R
SVENSSON, C
机构
关键词
D O I
10.1016/0038-1101(87)90174-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:439 / 443
页数:5
相关论文
共 14 条
[1]  
BENCUYA I, 1985, IEEE T ELECTRON DEV, V7, P1321
[2]  
CHRISTENSSON S, 1968, SOLID ST ELECTRON, V11, P798
[3]  
GUSTAFSSON S, 1986, INTERNAL REPORT
[4]  
GUSTAFSSON S, 1984, ELECTRON LETT, V13, P563
[5]   HOT-ELECTRON NOISE AND G-R NOISE IN SHORT-CHANNEL JFETS [J].
KIM, SK ;
VANDERZIEL, A .
SOLID-STATE ELECTRONICS, 1981, 24 (05) :429-434
[6]   NOISE DUE TO DONORS IN N-CHANNEL SILICON JFETS [J].
KIM, SK ;
VANDERZIEL, A ;
RUCKER, LM .
SOLID-STATE ELECTRONICS, 1978, 21 (09) :1099-1100
[7]  
KOTANI M, 1982, IEEE T ELECTRON DEV, V2, P194
[8]  
MOCHIDA Y, 1978, IEEE T ELECTRON DEV, V7, P761
[9]  
NISHIZAWA J, 1979, 11TH P C SOL STAT DE, P1
[10]  
NISHIZAWA JJ, 1975, IEEE T ELECTRON DEV, V4, P185