LEAKAGE CURRENT IN SEMICONDUCTOR JUNCTION RADIATION DETECTORS AND ITS INFLUENCE ON ENERGY-RESOLUTION CHARACTERISTICS

被引：71
作者：
GOULDING, FS
HANSEN, WL
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS | 1961年 / 12卷 / 02期
关键词：
D O I：
10.1016/0029-554X(61)90140-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：249 / 262
页数：14
相关论文
共 5 条
[1]  
BAKENSTROSS G, 1958, BELL SYSTEM TECH J, P699
[2]  
BIONDI FJ, 1958, TRANSISTOR TECHNOLOG, P158
[3]   PROPERTIES OF SILICON AND GERMANIUM .2. [J].
CONWELL, EM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1281-1300
[4]  
GILLESPIE AB, 1953, SIGNAL NOISE RESOLUT
[5]   CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].
SAH, CT ;
NOYCE, RN ;
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243
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