TUNABLE WAVELENGTH HOT-ELECTRON LIGHT EMITTER

被引：16

作者：

BALKAN, N ^{[1
]}

TEKE, A ^{[1
]}

GUPTA, R ^{[1
]}

STRAW, A ^{[1
]}

WOLTER, JH ^{[1
]}

VANDERVLEUTEN, W ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,DEPT PHYS,5600 MB EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 07期

关键词：

D O I：

10.1063/1.114700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the operation of a surface emitting light emitting diode. The wavelength of the emitted light can be tuned with the applied voltage. The device is based on a p-GaAs and n-Ga1-xAlxAs heterojunction containing an inversion layer in the p side and, GaAs quantum wells in the n side, and, is referred to as HELLISH-II (hot electron light emitting and lasing in semiconductor heterojunction). The device utilizes hot electron longitudinal transport and, therefore, light emission is independent of the polarity of the applied voltage. (C) 1995 American Institute of Physics.

引用

页码：935 / 937

页数：3

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