NONADDITIVE PHOTOCONDUCTIVITY DUE TO COMBINED ILLUMINATION OF ZINC-COMPENSATED SILICON

被引：0

作者：

LEBEDEV, AA ^{[1
]}

MAMADALI.AT ^{[1
]}

MAKHKAMO.S ^{[1
]}

机构：

[1] AF IOFFE PHYSICOTECH INST,LENINGRAD,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 7卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1093 / 1094

页数：2

共 8 条

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CARLSON, RO .

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[2]

FAINSHTEIN SM, 1966, SURFACE TREATMENT SE

[3] DIFFUSION AND ELECTRICAL BEHAVIOR OF ZINC IN SILICON [J].

FULLER, CS ;

MORIN, FJ .

PHYSICAL REVIEW, 1957, 105 (02) :379-383

[4]

GUTKIN AA, 1972, SOV PHYS SEMICOND+, V6, P204

[5]

GUTKIN AA, 1972, FIZ TEKH POLUPROV, V6, P237

[6]

LEBEDEV AA, 1973, FIZ TEKH POLUPROV, V7, P1636

[7]

Ryvkin S.M., 1964, PHOTOELECTRIC EFFECT

[8]

1965, ETCHING SEMICONDUCTO