STRUCTURAL AND OPTICAL-PROPERTIES OF ELECTRON-BEAM DEPOSITED ZN1-XCDXSE THIN-FILMS

被引:18
作者
RAO, DR
ISLAM, R
机构
[1] Materials Science Centre, Indian Institute of Technology, Kharagpur
关键词
D O I
10.1016/0040-6090(93)90431-N
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Structural and optical properties of thin films of ZnSe, CdSe and their ternaries were investigated. The bulk materials were prepared by direct reaction between the constituent elements (zinc and cadmium with selenium) in the temperature range 950-980-degrees-C. Thin films obtained on glass substrates at room temperature by electron-beam evaporation were cubic phase with (111) orientation. Linear variation of the lattice constant was observed for all compositions of Zn1-xCdxSe film, indicating a value of refractive index of around 2.42.
引用
收藏
页码:191 / 195
页数:5
相关论文
共 20 条
[1]   PHASE EQUILIBRIA IN CD-SE SYSTEM [J].
BURMEISTER, RA ;
STEVENSON, DA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (04) :394-+
[2]   EFFECT OF HYDROGEN ANNEALING ON STRUCTURAL AND OPTICAL-PROPERTIES OF ZNSE THIN-FILMS [J].
DAWAR, AL ;
SHISHODIA, PK ;
CHAUHAN, G ;
JAGADISH, C ;
KAPOOR, SK ;
MATHUR, PC .
JOURNAL OF CRYSTAL GROWTH, 1990, 100 (1-2) :281-285
[3]   GROWTH OF ZINC SELENIDE THIN-FILMS [J].
DAWAR, AL ;
SHISHODIA, PK ;
MATHUR, PC .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1989, 8 (05) :561-562
[4]   BLUE SPONTANEOUS AND STIMULATED-EMISSION IN VPE ZNSE EPILAYERS [J].
FAN, XW ;
TANG, ZK ;
TIAN, H .
JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) :944-952
[5]  
Goldberg P., 1966, LUMINESCENCE INORGAN, Vfirst
[6]   MASS SPECTROMETRIC AND KNUDSEN-CELL VAPORIZATION STUDIES OF GROUP 2B-6B COMPOUNDS [J].
GOLDFINGER, P ;
JEUNEHOMME, M .
TRANSACTIONS OF THE FARADAY SOCIETY, 1963, 59 (492) :2851-&
[7]   CHARACTERIZATION OF P-TYPE ZNSE [J].
HAASE, MA ;
CHENG, H ;
DEPUYDT, JM ;
POTTS, JE .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :448-452
[8]  
HARTMAN H, 1982, CURRENT TOPICS MATER, V9, pCH4
[9]   FORMATION AND PROPERTIES OF IN-DOPED HIGH-CONDUCTIVITY CDSE EVAPORATED FILM [J].
HAYASHI, T ;
SAEKI, R ;
SUZUKI, T ;
FUKAYA, M ;
EMA, Y .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) :5719-5723
[10]   GROWTH AND CHARACTERIZATION OF ZNSE GROWN ON GAAS BY HOT-WALL EPITAXY [J].
HINGERL, K ;
SITTER, H ;
AS, DJ ;
ROTHEMUND, W .
JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) :180-184