RADIATION EFFECTS IN GAAS JUNCTION FIELD-EFFECT TRANSISTORS

被引：41

作者：

ZULEEG, R ^{[1
]}

LEHOVEC, K ^{[1
]}

机构：

[1] UNIV SO CALIF,LOS ANGELES,CA 90007

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1980年 / 27卷 / 05期

关键词：

D O I：

10.1109/TNS.1980.4331022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1343 / 1354

页数：12

共 40 条

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[7] COMPARISON OF NEUTRON RADIATION TOLERANCE OF BIPOLAR AND JUNCTION FIELD EFFECT TRANSISTORS [J].

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[8] SPACE-CHARGE REGION OF NEUTRON-IRRADIATED SILICON P+N JUNCTIONS [J].

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[9] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

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