FAR-INFRARED MIXING IN HIGH-PURITY GAAS

[1] ASCARELLI G, 1961, PHYS REV, V124, P1324

[2] BETHE HA, 1957, QUANTUM MECHANICS ON, P304

[3] DONOR SPECTROSCOPY IN GAAS [J]. PHYSICS LETTERS A, 1968, A 28 (05) : 320 - +

[4] A THEORY OF SENSITIZED LUMINESCENCE IN SOLIDS [J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (05) : 836 - 850

[5] FETTERMAN H, 1970, 1970 P S SUBM WAV NE

[6] LOW-TEMPERATURE ELASTIC CONSTANTS OF GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (02) : 759 - &

[7] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) : 658 - &

[8] CASCADE CAPTURE OF ELECTRONS BY IONIZED IMPURITIES [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (1A): : A250 - &

[9] MAGNETIC FIELD EFFECTS ON HYDROGENIC DONOR STATES IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (12) : 883 - &

[10] OPTICAL MIXING BY MOBILE CARRIERS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1968, 21 (08) : 539 - &

[1] ASCARELLI G, 1961, PHYS REV, V124, P1324

[2] BETHE HA, 1957, QUANTUM MECHANICS ON, P304

[3] DONOR SPECTROSCOPY IN GAAS [J]. PHYSICS LETTERS A, 1968, A 28 (05) : 320 - +

[4] A THEORY OF SENSITIZED LUMINESCENCE IN SOLIDS [J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (05) : 836 - 850

[5] FETTERMAN H, 1970, 1970 P S SUBM WAV NE

[6] LOW-TEMPERATURE ELASTIC CONSTANTS OF GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (02) : 759 - &

[7] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) : 658 - &

[8] CASCADE CAPTURE OF ELECTRONS BY IONIZED IMPURITIES [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (1A): : A250 - &

[9] MAGNETIC FIELD EFFECTS ON HYDROGENIC DONOR STATES IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (12) : 883 - &

[10] OPTICAL MIXING BY MOBILE CARRIERS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1968, 21 (08) : 539 - &