WAFER FUSION - A NOVEL TECHNIQUE FOR OPTOELECTRONIC DEVICE FABRICATION AND MONOLITHIC INTEGRATION

被引：156
作者：
LIAU, ZL
MULL, DE
机构：
[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 08期
关键词：
D O I：
10.1063/1.102697
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Centimeter-size single-crystal InP or GaAs wafers have been fused together entirely, face to face or side by side, after a heat treatment in a graphite/quartz reactor which can press the wafers together through differential thermal expansion. Diodes formed by fusing p- and n-type wafers showed normal current-voltage characteristics and light emission. Fusion between lattice-mismatched wafers (i.e., InP and GaAs) has also been demonstrated.
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页码：737 / 739
页数：3
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