TEMPERATURE AND ENERGY DEPENDENCE OF PROTON DECHANNELING IN SILICON

被引：50
作者：
FOTI, G
GRASSO, F
QUATTROCCHI, R
RIMINI, E
机构：
来源：
PHYSICAL REVIEW B-SOLID STATE | 1971年 / 3卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.3.2169
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：2169 / +
页数：1
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