PUNCH-THROUGH CURRENTS AND FLOATING STRIP POTENTIALS IN SILICON DETECTORS

被引:37
作者
ELLISON, J [1 ]
HALL, G [1 ]
ROE, S [1 ]
WHEADON, R [1 ]
AVSET, BS [1 ]
EVENSEN, L [1 ]
机构
[1] CTR INDUSTRIFORSKNING,OSLO 3,NORWAY
关键词
D O I
10.1109/23.34447
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:267 / 271
页数:5
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