CHEMICAL VAPOR-DEPOSITION OF A SILICON-NITRIDE LAYER WITH AN EXCELLENT INTERFACE BY NH3 PLASMA TREATMENT

被引：15
|
作者：
SHIMODA, S
SHIMIZU, I
MIGITAKA, M
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 13期
关键词：
D O I：
10.1063/1.99213
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1068 / 1070
页数：3
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