IN-SITU MONITORING OF THE PRODUCTS FROM THE SIH4+WF6 TUNGSTEN CHEMICAL-VAPOR-DEPOSITION PROCESS BY MICROVOLUME MOSS SPECTROMETRY

被引:8
作者
CHEEK, RW [1 ]
KELBER, JA [1 ]
FLEMING, JG [1 ]
BLEWER, RS [1 ]
LUJAN, RD [1 ]
机构
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
关键词
D O I
10.1149/1.2221130
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We have used a novel application of in situ high pressure mass spectrometry to monitor the SiH4 + WF6 tungsten chemical vapor deposition process. We observed the production of both SiF4, and SiHF3, in ratios that vary with the SIH4/WF6 inlet flow ratio. The SiF4 and SiHF3 partial pressures were monitored over a tungsten coated wafer at 320 degrees C as the SiH4/WF6 inlet flow ratio was varied from a selective (0.25) to a nonselective (3.0) regime. We observed the SiHF3/SiF4 product ratio to decrease dramatically at reactant ratios associated with the onset of loss of selectivity (1-1.5). The reaction products were sampled by means of a fused silica capillary that was introduced between the reacting tungsten coated wafer and a differentially pumped mass spectrometer. Gas phase reaction and thermodiffusion effects were also observed. These data provide insight concerning loss of selectivity mechanisms, and illustrate the potential of this mass spectrometric technique for real-time in situ process control.
引用
收藏
页码:3588 / 3590
页数:3
相关论文
共 14 条
[2]  
CHOW RL, 1991, TUNGSTEN OTHER ADV M, P89
[3]   CHARACTERIZATION OF SELECTIVE CHEMICAL VAPOR-DEPOSITED TUNGSTEN USING SIH4 REDUCTION [J].
COLGAN, EG ;
CHAPPLESOKOL, JD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (03) :1156-1166
[4]   A MECHANISM FOR SELECTIVITY LOSS DURING TUNGSTEN CVD [J].
CREIGHTON, JR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (01) :271-276
[5]   STUDY ON MECHANISM OF SELECTIVE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN USING INSITU INFRARED-SPECTROSCOPY AND AUGER-ELECTRON SPECTROSCOPY [J].
KOBAYASHI, N ;
GOTO, H ;
SUZUKI, M .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) :1013-1019
[6]   COMPARATIVE-STUDY OF THE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION PROCESSES OF W AND MO [J].
LIFSHITZ, N ;
GREEN, ML .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (07) :1832-1836
[7]  
NAKAMURA Y, 1991, 1991 INT C SOL STAT, P216
[8]  
OHANLON JF, 1989, USERS GUIDE VACUUM T, P142
[9]  
Ohba T., 1991, Journal of the Institution of Electronics and Telecommunication Engineers, V37, P212
[10]   CHARACTERIZATION OF SILANE-REDUCED TUNGSTEN FILMS GROWN BY CVD AS A FUNCTION OF SI CONTENT [J].
SUZUKI, M ;
KOBAYASHI, N ;
MUKAI, K ;
KONDO, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (10) :3213-3218