PARAMETER EXTRACTION FOR A NEW ANALYTICAL MODEL OF THE SHORT-CHANNEL MOS TRANSISTOR

被引：0

作者：

Sevcenco, Andrei ^{[1
]}

Boianceanu, Cristian ^{[1
]}

机构：

[1] Univ Politehn Bucuresti, Bucharest, Romania

来源：

UNIVERSITY POLITEHNICA OF BUCHAREST SCIENTIFIC BULLETIN SERIES C-ELECTRICAL ENGINEERING AND COMPUTER SCIENCE | 2014年 / 76卷 / 02期

关键词：

analytical modeling; parameter extraction; short-channel effects; MOS transistor; fitting algorithm;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An extraction method for the parameters of a new analytical model of the submicron MOS transistor for analog applications is presented. The stages which form the extraction process are detailed, along with an original parameter extractor created in Labview, which uses the Levenberg-Marquardt fitting algorithm. Also presented are the results of the fitting of the model to experimental curves obtained with measured data taken from real MOS transistors, as well as to theoretical curves generated with the EKV model.

引用

页码：131 / 144

页数：14

共 50 条

[21] Model for Investigation of Ion/Ioff Ratios In Short-Channel Junctionless Double Gate MOSFETs [J].

Holtij, Thomas ;

Schwarz, Mike ;

Graef, Michael ;

Hain, Franziska ;

Kloes, Alexander ;

Iniguez, Benjamin .

2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS), 2013, :85-88

[22] A new two-dimensional analytical model for short-channel symmetrical dual-material double-gate metal-oxide-semiconductor field effect transistors [J].

Chiang, Te-Kuang ;

Chen, Mei-Li .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (6A) :3283-3290

[23] Short channel MOSFET model using a universal channel depletion width parameter [J].

Suzuki, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (06) :1202-1208

[24] An analytical model for turn-on characteristics of short channel polycrystalline-silicon thin-film transistor for circuit simulation [J].

Chopra, S ;

Gupta, RS .

MICROELECTRONIC ENGINEERING, 2000, 54 (3-4) :263-275

[25] 2-DIMENSIONAL ANALYTICAL MODELING OF THE SOURCE DRAIN ENGINEERING INFLUENCE ON SHORT-CHANNEL EFFECTS IN SOI MOSFETS [J].

JOACHIM, HO ;

YAMAGUCHI, Y ;

INOUE, Y ;

TSUBOUCHI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B) :822-826

[26] Model analysis and parameter extraction for MOS capacitor including quantum mechanical effects [J].

Jiang, HY ;

Zhang, PW .

JOURNAL OF COMPUTATIONAL MATHEMATICS, 2006, 24 (03) :401-411

[27] Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge [J].

Pino-Monroy, Dayana A. ;

Scheer, Patrick ;

Bouchoucha, Mohamed Khalil ;

Galup-Montoro, Carlos ;

Barragan, Manuel J. ;

Cathelin, Philippe ;

Fournier, Jean-Michel ;

Cathelin, Andreia ;

Bourdel, Sylvain .

IEEE ACCESS, 2022, 10 :86270-86285

[28] A dc I-V model for short-channel polygonal enclosed-layout transistors [J].

Lopez, Paula ;

Hauer, Johann ;

Blanco-Filgueira, Beatriz ;

Cabello, Diego .

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2009, 37 (02) :163-177

[29] Machine Learning-Driven Extraction of Hybrid Compact Models Integrating Neural Networks and Berkeley Short-Channel Insulated-Gate Field-Effect Transistor Model-Common Multigate for Multidevice Applications [J].

Eom, Seungjoon ;

Lee, Seunghwan ;

Yun, Hyeok ;

Cho, Kyeongrae ;

Kim, Soomin ;

Baek, Rockhyun .

ADVANCED INTELLIGENT SYSTEMS, 2024,

[30] Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET [J].

Munteanu, D ;

Autran, JL ;

Harrison, S ;

Nehari, K ;

Tintori, O ;

Skotnicki, T .

MOLECULAR SIMULATION, 2005, 31 (12) :831-837

← 1 2 3 4 5 →