MINORITY-CARRIER LIFETIME IN MERCURY CADMIUM TELLURIDE

被引:172
作者
LOPES, VC
SYLLAIOS, AJ
CHEN, MC
机构
[1] Texas Instrum. Inc., Dallas, TX
关键词
D O I
10.1088/0268-1242/8/6S/005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reviews the current status of minority carrier lifetime in n-type and p-type (Hg, Cd)Te. This review includes a discussion of the relevant (Hg, Cd)Te recombination mechanisms and measurement techniques. The reported experimentally determined lifetimes were related to (Hg, Cd)Te material properties of carrier concentration, Shockley-Read-Hall centres, non-uniformities and dislocation densities.
引用
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页码:824 / 841
页数:18
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