MINORITY-CARRIER LIFETIME IN MERCURY CADMIUM TELLURIDE

被引：172
|
作者：
LOPES, VC
SYLLAIOS, AJ
CHEN, MC
机构：
[1] Texas Instrum. Inc., Dallas, TX
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 06期
关键词：
D O I：
10.1088/0268-1242/8/6S/005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews the current status of minority carrier lifetime in n-type and p-type (Hg, Cd)Te. This review includes a discussion of the relevant (Hg, Cd)Te recombination mechanisms and measurement techniques. The reported experimentally determined lifetimes were related to (Hg, Cd)Te material properties of carrier concentration, Shockley-Read-Hall centres, non-uniformities and dislocation densities.
引用
收藏
页码：824 / 841
页数：18
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