SDW-MOSFET STATIC MEMORY CELL

被引：5

作者：

ELMASRY, MI ^{[1
]}

HAMDY, EZ ^{[1
]}

机构：

[1] UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1981年 / 16卷 / 02期

关键词：

D O I：

10.1109/JSSC.1981.1051545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：80 / 85

页数：6

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ELMASRY, MI ;

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[4]

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[5]

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[6]

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[7] LAMBDA DIODES UTILIZING AN ENHANCEMENT-DEPLETION CMOS-SOS PROCESS [J].

IPRI, AC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) :751-756

[8]

KANG G, 1975, ELECTRON, V48, P105

[9] A 2K BY 8-BIT STATIC MOS RAM WITH A NEW MEMORY CELL STRUCTURE [J].

OHZONE, T ;

HIRAO, T ;

TSUJI, K ;

HORIUCHI, S ;

TAKAYANAGI, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (02) :201-205

[10]

PASHLEY RD, 1979, ISSCC DIG TECH PAPER, P106

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