NEW METHOD FOR EPITAXIAL HETEROSTRUCTURE LAYER GROWTH

被引：86
作者：
MANTL, S
BAY, HL
机构：
[1] Institut für Schicht-und Ionentechnik, Forschungszentrum Jülich, W-5170 Jülich
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 03期
关键词：
D O I：
10.1063/1.107965
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new method for the fabrication of compound thin films inside single-crystalline matrices is demonstrated. It differs from all known techniques by the combination of epitaxial growth of the host material and the controlled deposition of a precipitating compound. A subsequent thermal treatment leads to a coalescence of the precipitates, resulting in a continuous buried layer. We call this method allotaxy. As an example we demonstrate the growth of buried epitaxial CoSi2 layers in Si (100).
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页码：267 / 269
页数：3
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