SILICON IMPURITY DISTRIBUTION AS REVEALED BY PULSED MOS C-V MEASUREMENTS

被引：99

作者：

VANGELDER, W

NICOLLIAN, EH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 01期

关键词：

D O I：

10.1149/1.2407927

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：138 / +

页数：1

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