SATURATION OF THE LIGHT-INDUCED DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON

被引：89
作者：
PARK, HR
LIU, JZ
WAGNER, S
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 25期
关键词：
D O I：
10.1063/1.101965
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2658 / 2660
页数：3
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